Part No. ： SHF-0289 SHF-0289Z
Description :0.05 - 6 GHz, 1.0 Watt GaAs HFET Amplifiers SOT-89
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Linearity Performance at 1.96 GHz
+30 dBm P1dB
+43 dBm OIP3
+23.7 dBm IS-95 Channel Power
+14.6 dB Gain
• +21.7 dBm W-CDMA Channel Power
• High Drain Efficiency (>50% at P1dB)
• See App Note AN-032 for circuit details
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager SystemsSirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs
Heterostructure FET (HFET) housed in a low-cost surface-mount plastic
package. The HFET technology improves breakdown voltage while minimizing
Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0289 is +30dBm when
biased for Class AB operation at 7V,200mA. The +43 dBm third order
intercept makes it ideal for high dynamic range, high intercept point
requirements. It is well suited for use in both analog and digital wireless
communication infrastructure and subscriber equipment including 3G,
cellular, PCS, fixed wireless, and pager systems.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Description :0.05 - 6 GHz, 1.0 Watt GaAs HFET Amplifiers SOT-89
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Linearity Performance at 1.96 GHz
+30 dBm P1dB
+43 dBm OIP3
+23.7 dBm IS-95 Channel Power
+14.6 dB Gain
• +21.7 dBm W-CDMA Channel Power
• High Drain Efficiency (>50% at P1dB)
• See App Note AN-032 for circuit details
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager SystemsSirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs
Heterostructure FET (HFET) housed in a low-cost surface-mount plastic
package. The HFET technology improves breakdown voltage while minimizing
Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0289 is +30dBm when
biased for Class AB operation at 7V,200mA. The +43 dBm third order
intercept makes it ideal for high dynamic range, high intercept point
requirements. It is well suited for use in both analog and digital wireless
communication infrastructure and subscriber equipment including 3G,
cellular, PCS, fixed wireless, and pager systems.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Maker ：SIRENZA
