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TC511664BZ-80 ZIP-40 (2pcs) All parts are directly matching the strict inventory quality of UTSOURCE Global Supply Chain. For more technical datasheets and PDF specifications, please look up the UTSOURCE database.

Description of TC511664BZ-80

The TC511664BZ-80 is a dynamic RAM (DRAM) component manufactured by Toshiba Semiconductor. It is organized as 65,536 words by 16 bits, providing high-density memory storage for various applications. This DRAM leverages Toshiba's advanced CMOS silicon gate process technology to ensure wide operating margins and reliable performance. The device supports multiplexed address inputs, enabling it to be packaged in standard 40-pin configurations such as plastic SOJ or ZIP packages.

Key system-oriented features include compatibility with a single 5V ±10% power supply and direct interfacing capability with high-performance logic families like Schottky TTL. These attributes make the TC511664BZ-80 suitable for systems requiring robust memory solutions with minimal complexity.

Parameters of TC511664BZ-80

Parameter	Value
Organization	65,536 words x 16 bits
Access Time	80 ns
Package Type	40-pin Plastic SOJ / ZIP
Operating Voltage	5V ±10%
Technology	CMOS Silicon Gate Process
Memory Type	Dynamic RAM (DRAM)
Compatibility	Schottky TTL Logic Families

Additional Notes

The TC511664BZ-80 is designed for automated testing and insertion equipment due to its compact package size, which ensures high system bit densities. Its advanced circuit techniques provide both internal and external operating reliability, making it an ideal choice for memory-intensive applications.

This DRAM variant is part of Toshiba’s broader portfolio of memory solutions, which includes similar components such as the TC511664BJ and other pseudo-static RAM options. While specific details about its application circuits are not provided here, the TC511664BZ-80 is widely recognized for its versatility and performance in demanding environments.

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