STARPOWER IGBT Power Module

Model: GD150HFY120C1S
Rating: 1200V / 150A (Dual Package)

Product Overview

The STARPOWER GD150HFY120C1S IGBT power module is designed for high-performance power conversion applications. It offers ultra-low conduction loss, short-circuit ruggedness, and reliable thermal performance, making it ideal for inverters, motor drives, and UPS systems.

Key Features

• Low VCE(sat) trench IGBT technology
• 10μs short-circuit capability
• Positive temperature coefficient of VCE(sat)
• Maximum junction temperature: 175℃
• Low inductance case design
• Fast & soft reverse recovery anti-parallel diode
• Isolated copper baseplate with DBC technology

Typical Applications

• Motor drive inverters
• AC/DC servo drive amplifiers
• Uninterruptible power supplies (UPS)

Absolute Maximum Ratings (Tc=25℃)

• IGBT
• Collector-Emitter Voltage: 1200V
• Gate-Emitter Voltage: ±20V
• Collector Current: 230A (25℃), 150A (100℃)
• Pulsed Collector Current: 300A
• Max Power Dissipation: 746W
• Diode
• Repetitive Peak Reverse Voltage: 1200V
• Continuous Forward Current: 150A
• Max Forward Current (pulse): 300A
• Module

• Max Junction Temperature: 175℃
• Operating Temperature: -40 ~ +150℃
• Storage Temperature: -40 ~ +125℃
• Isolation Voltage: 4000V (1 min, 50Hz)

Electrical Characteristics (Tc=25℃)

• VCE(sat): 1.65V typ @ 150A
• Gate Threshold Voltage: 6.0V typ
• Internal Gate Resistance: 2.0Ω
• Input Capacitance: 13nF
• Switching Times: Turn-on Delay 292ns, Rise Time 59ns, Turn-off Delay 344ns, Fall Time 191ns
• Switching Losses: Eon 4.55mJ, Eoff 11.6mJ

Diode Characteristics

• Forward Voltage: 1.65V typ @ 150A
• Reverse Recovery Charge: 17μC (25℃)
• Reverse Recovery Current: 140A
• Reverse Recovery Energy: 9.75mJ

Module Characteristics

• Stray Inductance: ≤30nH
• Thermal Resistance (Junction-to-Case): IGBT 0.201 K/W, Diode 0.326 K/W
• Weight: 150g
• Mounting Torque: M5 screws 2.5–5.0 N·m, M6 screws 3.0–5.0 N·m