Manufacturer: Diodes Incorporated    
Product Category: Bipolar Transistors - Bipolar Junction Transistors (BJT)    
Installation style: SMD/SMT    
Package : SOT-89-3    
Transistor polarity: NPN    
Configuration: Single    
Collector-emitter maximum voltage VCEO: 80 V    
Collector-base voltage VCBO: 100 V    
Emitter-base voltage VEBO: 6 V    
Collector-emitter saturation voltage: 500 mV    
Maximum DC collector current: 1 A    
Pd - Power Dissipation: 1 W    
Gain bandwidth product fT: 150 MHz    
Minimum operating temperature: -55 C    
Maximum operating temperature: + 150 C    
Qualifications: AEC-Q101        
Collector continuous current: 1 A    
Base Gain HFE Min: 100    
DC current gain hFE max: 250