Manufacturer: onsemi    
Product Category: Bipolar Transistors - Bipolar Junction Transistors (BJT)        
Installation style: SMD/SMT    
Package: SOT-223-4    
Transistor polarity: NPN    
Configuration: Single    
Collector-emitter maximum voltage VCEO: 80 V    
Collector-base voltage VCBO: 100 V    
Emitter-base voltage VEBO: 5 V    
Collector-emitter saturation voltage: 500 mV    
Maximum DC collector current: 1 A    
PD - Power Dissipation: 1.5 W    
Gain bandwidth product fT: 130 MHz    
Minimum operating temperature: -65 C    
Maximum operating temperature: + 150 C    
Qualifications: AEC-Q101    
Base Gain hfe Min: 63 at 150 mA, 2 V    
DC current gain hFE max: 160 at 150 mA, 2 V    
Product Type: BJTs - Bipolar Transistors