Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 100 V |
| Maximum Drain Source Resistance | 0.004 Ω |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Gate Source Voltage | ±16 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Category | Power MOSFET |
| Maximum Power Dissipation | 370 W |
| Configuration | Single |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Dimensions | 10.67 x 4.83 x 9.02mm |
| Height | 9.02mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Turn-On Delay Time | 74 ns |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 87 nC @ 4.5 V |
| Typical Input Capacitance @ Vds | 11360 pF@ 50 V |
| Typical Turn-Off Delay Time | 110 ns |
| Width | 4.83mm |