
Samsung PM9A3 MZ1L23T8HBLA-00A07 3.84TB M.2 22x110mm Gen4 PCIe 4.0 x4 NVMe SSD - New Pull
PCI Express Gen 4 x4 interface delivers up to twice the read performance of PCIe Gen 3 SSDs, and dedicated hardware accelerators for three times the random write performance of the previous generation.
Available in a variety of form factors to meet the needs of multiple system types in your server deployment. All form factors are built using the same Samsung SSD controllers and V-NAND, for high volume availability and simplified SSD qualification.
Data center architects face challenging requirements when delivering reliable computing and storage resources at the lowest total cost. Data center servers require high levels of I/O performance to keep their CPUs fully utilized, and high system density, to minimize total cost. The storage systems that supply that I/O performance need to deliver consistent performance and latency to all tenant virtual machines and containers 24/7, 365 days a year.
Samsung provides data centers with solid-state drives (SSDs) that deliver exceptional performance in public cloud applications, such as infrastructure as a service (IaaS), content delivery networks (CDN), shared hosting, NoSQL databases, and cloud data storage. Compared to SATA SSDs, these high-performing NVMe SSDs deliver more than ten times the read performance and lower latency, while still maintaining SATA cost and low-power consumption per IOP.
As a pioneer in NVMe SSDs, Samsung has been delivering the advantages of industry standard NVMe performance longer than anyone else. Samsung also has the added advantage of being a vertically integrated supplier of SSDs, enabling the highest levels of quality and support.
| FEATURES | |
|---|---|
| DRIVE CONFIGURATION | |
| PERFORMANCE SPECIFICATIONS | |
| RELIABILITY SPECIFICATIONS | |
| ENVIRONMENTAL SPECIFICATIONS | |
| POWER REQUIREMENTS | |
| PHYSICAL DIMENSION | |
| PCI Express Gen4 | Single port x4 lanes, Compliant with PCI Express Base Specification Rev. 4.0 |
| NVM Express | Compliant with NVM Express Specification Rev. 1.4 |
| Power-Loss Data Protection | Enhanced |
| End-to-End Data Protection | Yes |
| SSD Enhanced S.M.A.R.T. | Supported |
| Encryption | Hardware based AES-XTS 256-bit Encryption Engine |
| Wear Leveling | Static and Dynamic |
| Compliance | RoHS / Halogen-Free, TCG Opal 2.0 |
| Form Factor | M.2 |
| Interface | PCI Express Gen4 x4 |
| Bytes per Sector | 512 (default), 4096 Bytes |
| Gen3 | |
| Sequential Read (128KB) | Up to 3500 MB/s |
| Sequential Write (128KB) | Up to 2000 MB/s |
| Random Read (4KB, Sustained) | Up to 800K IOPS |
| Random Write (4KB, Sustained) | Up to 85K IOPS |
| Gen4 | |
| Sequential Read (128KB) | Up to 5500 MB/s |
| Sequential Write (128KB) | Up to 2000 MB/s |
| Random Read (4KB, Sustained) | Up to 800K IOPS |
| Random Write (4KB, Sustained) | Up to 85K IOPS |
| Latency (Random Read/Write, typical) | 75/30 μs |
| Latency (Sequential Read/Write, typical) | 20/20 μs |
| Drive Ready Time (typical) | 5 s |
| Uncorrectable Bit Error Rate | 1 sector per 1017 bits read |
| MTBF | 2,000,000 hours |
| Component Design Life | 5 years |
| Endurance (3840/1920/960GB) | 1 DWPD |
| TBW (@4KB Random Write) | 3840GB: 7008 TB 1920GB: 3504 TB 960GB: 1752 TB |
| Data Retention | 3 months |
| Temperature, Case (Tc) | Operating: 0 ~ 70°C Non-operating: -40 ~ 85°C |
| Humidity (non-condensing) | 5 ~ 95% |
| Linear Shock (0.5ms, 1/2 sine wave) | Non-operating: 1,500 G |
| Vibration (10 ~ 2,000 Hz, Sinusoidal) | Non-operating: 20 G |
| Supply Voltage / Tolerance | 3.3V ±5% |
| Active (max. RMS) | 8.2 W |
| Idle (typical) | 2.5 W |
| Width | 22.00 ± 0.15 mm |
| Length | 110.00 ± 0.15 mm |
| Thickness | 3.80 ± 0.18 mm |
| Weight | Up to 20 g |
SAM-MZ-1L23T80-NP-OE
Alternate Part Numbers: MZ1L23T8HBLA-00A07 MZ1L23T8HBLA

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