Product Description: K4B1G1646G-BCH9 DDR3 SDRAM Chip

The K4B1G1646G-BCH9 is a high-performance 1Gb DDR3 Synchronous Dynamic RAM (SDRAM) component developed by Samsung Electronics, engineered to deliver robust and efficient memory solutions for a wide range of computing and embedded applications.

Key Features:

• Capacity & Organization: 1Gb (128MB) density, organized as 64M words × 16 bits, optimized for balanced performance in data-intensive operations.

• Speed & Performance: Supports a DDR3-1600 speed grade, operating at a clock frequency of 800 MHz with a data transfer rate of 1600 MT/s (megatransfers per second), ensuring low latency and high throughput.

• Voltage: Operates at a standard 1.5V ±0.075V, maintaining compatibility with DDR3 interfaces while balancing power consumption.

• Package: Housed in a compact 96-ball FBGA (Fine-Pitch Ball Grid Array) package, designed for space-efficient PCB layouts and reliable mechanical endurance.

• Temperature Range: Rated for an industrial temperature range (-40°C to +95°C), ensuring stable operation in harsh environments and extended mission-critical applications.

• Advanced Features: Includes On-Die Termination (ODT), programmable burst lengths (BL4/BL8), and auto-precharge/refresh functions to enhance signal integrity and power efficiency.

Applications:

• Industrial automation, embedded systems, networking devices (routers, switches), and telecommunications infrastructure.

• Consumer electronics, automotive computing modules, IoT devices, and medical equipment requiring high-reliability memory.

Compliance & Quality: Fully compliant with JEDEC DDR3 standards, guaranteeing interoperability and long-term availability. Manufactured under Samsung’s stringent quality control processes for exceptional reliability and performance consistency.

This chip combines high-speed operation, rugged durability, and energy efficiency, making it an ideal choice for modern embedded and industrial systems demanding robust memory solutions.

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