This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Transistor Polarity:N Channel Continuous Drain Current Id:33A Drain Source Voltage Vds:100V On Resistance Rds(on):0.044ohm Rds(on) Test Voltage Vgs:10V Threshold Voltage Vgs:4V No. of Pins:3Pins Operating Temperature Max:175°C Package include: 10pcs*IRF540