Experience the reliability and efficiency of APT's enhancement mode high voltage power MOSFETs with the MICROSEMI APT5025BN N-Channel.
These power MOSFETs are designed for a broad range of applications, from industrial automation to telecommunications, offering exceptional performance and robustness.
The APT5025BN N-Channel MOSFET is part of a respected lineage of products from APT, known for their quality and durability.
The high voltage capability ensures that these MOSFETs are suitable for a variety of power management tasks, providing a safe and efficient path for electrical current in your electronic circuits.
The APT5025BN is an N-Channel MOSFET with a 500V drain-source voltage rating and a typical continuous drain current of 23A (at 25°C). It comes in a TO-247 package.
Here are some potential equivalent or alternative components, though suitability depends on your specific application and circuit requirements:

The direct exact replacements and equivalents for the Microsemi (formerly Advanced Power Technology / Microchip) APT5025BN are the
IXTH460P2 from IXYS
IRFP460 from various manufacturers, and the FQA24N50 from Onsemi