Product Description:-

IGBT Configuration: Half Bridge DC Collector Current: 616A Collector Emitter Saturation Voltage Vce(on): 1.8V Junction Temperature, Tj Max: 175°C Transistor Case Style: SEMITRANS 3 IGBT Termination: Stud Collector Emitter Voltage V(br)ceo: 1.2kV IGBT Technology: IGBT 4 [Trench]