This auction is for a Brand new 300W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Brand: NXP

Features

-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent

 drain current IDq = 1.4 A

-Peak envelope power load power = 300 W

-Power gain = 21 dB

-Drain efficiency = 46 %

-Third order intermodulation distortion = 35 dBc

-DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent

 drain current IDq = 1.4 A:

-Average output power = 75 W

-Power gain = 21 dB

-Drain efficiency = 32 %

-Third order intermodulation distortion = 32 dBc (4.3 MHz from center frequency)

-Integrated ESD protection

-Advanced flange material for optimum thermal behavior and reliability

-Excellent ruggedness

-High power gain

-High efficiency

-Designed for broadband operation (470 MHz to 860 MHz)

-Excellent reliability

-Internal input and output matching for high gain and optimum broadband operation

-Easy power control

-Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

 (RoHS)

PLEASE ASK ANY QUESTIONS BEFORE BIDDING TO BE SURE WHAT YOU ARE BIDDING ON. I WILL BE MORE THAN GLAD TO ANSWER ALL YOUR inquiries.

The ITEM will be sent inside a cardboard box to assure that they will arrive safe.