Description:

Lot of 5 genuine International Rectifier 2N6766 N-channel power MOSFETs in classic TO-3 / TO-204AE metal can packages. These are high-reliability HEXFET® devices rated around 200 V VDS, 30 A ID and approx. 150 W dissipation with low RDS(on) (~85–90 mΩ @ 10 V gate). Originally qualified to MIL-PRF-19500/543, they were designed for demanding defense / industrial power stages. New old stock (NOS) from 1990 date codes; cans and leads may show very light storage marks, but the parts are unused and never soldered.

Modern uses:

- High-power switching stages in SMPS, DC-DC converters and inverters

- Motor and servo drives, relay/solenoid drivers and high-energy pulse circuits

- Upgrading or repairing vintage industrial, audio or RF amplifiers that used TO-3 MOSFETs

- Any project where you want rugged, low-RDS(on) N-channel MOSFETs in hermetic TO-3 cans instead of plastic packages

Compatibility note:

2N6766 is an N-channel enhancement-mode power MOSFET in a TO-3 / TO-204AE metal can package. Typical ratings: 200 V drain-source voltage, 30 A continuous drain current at 25 °C, max RDS(on) around 85–90 mΩ at VGS = 10 V, power dissipation up to ~150 W with proper heatsinking (see the Microsemi/Infineon datasheet for exact limits). Pinout follows the standard TO-3 MOSFET arrangement (case = drain, two pins are source and gate). Always confirm pinout and ratings against your original device and the 2N6766 datasheet before substitution, and ensure adequate heatsinking and insulation in high-power or safety-critical designs.