Manufacturer:

ITT

Product Category:

Bipolar Transistors - BJT

RoHS:

Mounting Style:

Through Hole

Package / Case:

TO-18

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

15 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

4.5 V

Collector-Emitter Saturation Voltage:

500 mV

Maximum DC Collector Current:

200 mA

Gain Bandwidth Product fT:

500 MHz

Maximum Operating Temperature:

+ 200 C

Series:

2N2369

Brand:

ITT

DC Collector/Base Gain hfe Min:

20 at 100 mA, 1 V

DC Current Gain hFE Max:

120

Height:

5.33 mm

Length:

5.84 mm

Minimum Operating Temperature:

- 65 C

Packaging:

Bulk

Pd - Power Dissipation:

360 mW