P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers.
LIMITING VALUES
-VDS (drain-source voltage) - 200 V ±VGSO (gate-source voltage) - 20 V -ID (drain current DC value) - 250 mA -IDM (drain current peak value) - 600 mA Ptot (total power dissipation up to Tamb = 25 °C) - 1 W Tstg (storage temperature range) -65 150 °C Tj (junction temperature) - 150 °C