APT13GP120BDQ1G Transistor: IGBT PT 1.2kV 20A 250W TO247-3 MICROCHIP TECHNOLOGY

APT13GP120BDQ1G Transistor: IGBT PT 1.2kV 20A 250W TO247-3 MICROCHIP TECHNOLOGY
Manufacturer: MICROCHIP TECHNOLOGY
Transistor Type: IGBT
Mounting: THT
Case: TO247-3
Packaging Type: Tube
Technology: POWER MOS 7®
Technology: PT
Power dissipation: 250W
Switch-on time: 21ns
Switch-off time: 270ns
Semiconductor element characteristics: co-pack diode
Collector current in pulse: 50A
Gate - Emitter Voltage: ±20V
Collector Emitter Current: 20A
Collector Emitter Voltage: 1.2kV
Gate Charge: 55nC

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