For Switching and Amplifier Designs
Complement to BC557
 
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 45 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 250 mV
Maximum DC Collector Current: 0.1 A
Gain Bandwidth Product fT: 300 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-92-3
DC Collector/Base Gain hfe Min: 110
DC Current Gain hFE Max: 800
Maximum Power Dissipation: 0.5 W
Minimum Operating Temperature: - 65 C
 
Package Included: 
20 x BC547B Complementary Epitaxial Silicon NPN Transistors 45V 100mA 500mW Amplifier TO-92 Case