Product Features:
- Brand: Samsung
- Model: K4B4G1646E-BCNB
- Chip Type: DDR3 SDRAM Memory Chip
- Capacity: 4Gb (256Mx16)
- Speed: DDR3-2133 (2133Mb/sec/pin)
- Package Type: 96-pin FBGA
- Operating Voltage: 1.5V
- Transmission Features: Supports ZQ self-calibration and ODT die termination
Product Description:
The Samsung K4B4G1646E-BCNB is a 4Gb high-speed DDR3 SDRAM memory chip, engineered for stability and performance, suitable for embedded and industrial applications.
This listing is for 1 piece sale of Samsung K4B4G1646E-BCNB chip, perfect for individual use, small-batch procurement, repair work, or engineering R&D.
Applications:
- Corporate Procurement & Mass Production: Industrial control systems, embedded devices, consumer electronics
- Repair Work: Fix memory-related issues for laptops, industrial PCs, embedded equipment
- Engineering & R&D: Embedded system R&D, IoT gateways, high-performance prototypes
- Industrial & IoT: Edge computing devices, industrial automation, smart home controllers
Highlights:
- Stable performance (compatibility check recommended before use)
- High-speed DDR3-2133, energy-saving 1.5V operating voltage, and stable data transmission via ZQ self-calibration and ODT die termination
- Compatible with laptops, industrial PCs, embedded devices, and R&D prototypes (compatibility check recommended)
- Cost-effective for bulk procurement, production lines, and repair workshops
- Suitable for electronic procurement teams, repair technicians, engineers, and developers
- In case of any question, please feel free to check with us!
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