|
|---|
| Transistor Type |
NPN |
| Maximum DC Collector Current |
60 mA |
| Maximum Collector Emitter Voltage |
20V |
| Package Type |
35 Micro-X
|
| Mounting Type |
Surface |
| Maximum Power Dissipation |
500 mW |
| Minimum DC Current Gain |
270
|
| Transistor Configuration |
Single |
| Maximum Collector Base Voltage |
20 V |
| Maximum Emitter Base Voltage |
1.5 V |
| Maximum Operating Frequency |
6 GHz |
| Pin Count |
4
|
| Number of Elements per Chip |
1 |
| Dimensions |
2.54mm Diameter x 1.45mm High
|
| Maximum Collector Emitter Saturation Voltage |
- |
Lead Length across packege
|
11.54mm |
| Maximum Operating Temperature |
+150 °C |
|
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|
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