Solid state drive
Capacity: 120GB
Variants: 120GB 250GB 500GB 1TB 2TB
Hardware versions:
Samsung V2
120GB 250GB 500GB 1TB 2TB
Samsung V3
4TB
Oversupply: 16.2GB / 14.5
Production: End of life
Released: December 8, 2014
Price at launch: 100 USD
Part number: MZ-75E120
Market: Consumers
Physicist
Form factor: 2.5
Interface: SATA 6Gbps
Protocol: AHCI
Power consumption: 0.05W (idle)
3.7W (average)
4.4W (maximum)
Controller
Manufacturer: Samsung
Name: MGX (S4LN062X01)
Architecture: ARM 32-bit Cortex R4
Number of cores: Dual-Core
Frequency: 550 MHz
Foundry: Samsung
Process: 32nm
Flash channels: 8
Chip enablements: 8
NAND flash
Manufacturer: Samsung
Name: V-NAND V2
Part number: K9OKGY8S7C-CCK0
Type: TLC
Technology: 32 layers
Speed: 533 MT/s ... 1000 MT/s
Capacity: 1 chip at 1 Tbit
Topology: Charge Trap
Process: 40nm
Die size: 69 mm²
(1.9 Gbit/mm²)
Dies per chip: 8 dies at 128 Gbit
Plans per day: 1
Plans per day: 1
Word lines: 39 per NAND string
82.1% vertical efficiency
Reading time (tR): 45 µs
Programming time (tProg): 700 µs
Block erase time (tBERS): 3500 ms
Disk writing speed: 50MB/s
Resistence:
(up to) 7000 P/E cycles
(20500 in SLC mode)
Page size: 16 KB
Block size: 384 pages
Plan size: 2732 blocks
DRAM cache
Type: LPDDR2-1066
Name: SAMSUNG K4E4E164EE-SGCE
Capacity: 256MB
(1x 256MB)
Organization: 2Gx16
Performance
Sequential reading: 540 MB/s
Sequential writing: 520 MB/s
Random read: 94,000 IOPS
Random Write: 88,000 IOPS
Endurance: 75 TBW
Warranty: 5 years
MTBF: 1.5 million hours
Drive writes per day (DWPD): 0.3
SLC write cache: approximately 3 GB
(static only)
Speed when cache is full: approximately 150 MB/s
Characteristics
TRIM: Yes
SMART: Yes
Power loss protection: No
Encryption:
AES-128 AES-256 TCG Opal
RGB lighting: No
Compatible with PS5: No