Description:

STMicroelectronics brings you their latest NPN TIP120 Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@0.5A@3 V|1000@3A@3V. 

It has a maximum collector emitter saturation voltage of 2@12mA@3A|4@20mA@5A V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

The STMicroelectronics TIP120 are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Included:

• 3 x TIP120
  

This item features:

• Low collector-emitter saturation voltage
• General purpose linear and switching
• Thermal overload protection
• Short circuit protection
• Output transition SOA protection

Condition:

• New and Authentic Component(s) - STMicroelectronics TIP120 BJT Power Darlington Transistor NPN TO220AB IC
• Friendly Note: Be mindful of the many, inexpensive, counterfeits available on the market.

Shipping and general details:

• Shipping is free in the United States and shipped via USPS First Class.
• We do our best to offer you great pricing.
• Orders are packaged in custom-cut (dependent on quantity of chips ordered) anti-static tubes, providing excellent ESD protection.
• 30-Day Return Policy.
• We are expanding on a daily basis. If you do not see the part, or quantity of the part, you are looking for, please, let us know. We will do our best to accommodate you.