The Samsung 990 PRO NVMe SSD PCIe Gen 4 M.2 is built for demanding workloads — gaming, video editing, 3D modelling, and data analysis — where consistent high throughput matters. It delivers sequential read speeds up to 7,450 MB/s and sequential write speeds up to 6,900 MB/s, approaching the ceiling of the PCIe 4.0 interface. A nickel-coated Samsung in-house controller manages heat actively, helping to prevent the performance drops that thermal throttling causes under sustained load.
| Capacity | 1TB |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read (QD32/T16) | Up to 1,200K IOPS |
| Random Write (QD32/T16) | Up to 1,550K IOPS |
| Endurance (TBW) | 600 TBW |
| DRAM Cache | 1GB LPDDR4 |
| Warranty | 5 Years |
| Capacity | 2TB |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read (QD32/T16) | Up to 1,400K IOPS |
| Random Write (QD32/T16) | Up to 1,550K IOPS |
| Endurance (TBW) | 1,200 TBW |
| DRAM Cache | 2GB LPDDR4 |
| Warranty | 5 Years |
| Capacity | 4TB |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read (QD32/T16) | Up to 1,600K IOPS |
| Random Write (QD32/T16) | Up to 1,550K IOPS |
| Endurance (TBW) | 2,400 TBW |
| DRAM Cache | 4GB LPDDR4 |
| Warranty | 5 Years |
Best for:
Trade-offs:
Experience up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near the max performance of PCIe® 4.0. Fly high in gaming, video editing, 3D modeling, data analysis and more.
Use less power and get more performance. Enjoy up to 50% improved performance per watt over 980 PRO, plus optimal power efficiency with max PCIe® 4.0 performance.
Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating.
A more than 55% improvement in random performance enables faster loads for an ultimate gaming experience on PS5 and DirectStorage PC games.
General
| Brand | Samsung |
| Model Number | MZ-V9P1T0BW |
| Capacity | 1TB |
| Form Factor | M.2 (2280) |
| Dimensions | Max 80.0 x Max 22 x Max 2.3 mm |
| Controller | Samsung in-house Controller (Pascal, 8nm) |
| NAND Flash | Samsung V-NAND TLC |
| DRAM Cache | 1GB LPDDR4 |
Performance
| Interface | PCIe Gen 4.0 x4, NVMe 2.0 |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read QD1/T1 | Up to 22K IOPS |
| Random Write QD1/T1 | Up to 80K IOPS |
| Random Read QD32/T16 | Up to 1,200K IOPS |
| Random Write QD32/T16 | Up to 1,550K IOPS |
Power & Environment
| Idle Power (APST on) | 50 mW |
| Active Power - Read (Avg.) | 5.4 W |
| Active Power - Write (Avg.) | 5.0 W |
| L1.2 Mode Power | 5 mW |
| Operating Temperature | 0-70°C |
Reliability
| Endurance (TBW) | 600 TBW |
| MTBF | 1.5 Million Hours |
| Warranty | 5 Years |
| Security / Encryption | AES 256-bit, TCG/Opal 2.0, IEEE1667, MS eDrive |
| Management Software | Samsung Magician |
| Compatible Devices | Client PCs, PlayStation 5 |
General
| Brand | Samsung |
| Model Number | MZ-V9P2T0BW |
| Capacity | 2TB |
| Form Factor | M.2 (2280) |
| Dimensions | Max 80.0 x Max 22 x Max 2.3 mm |
| Controller | Samsung in-house Controller (Pascal, 8nm) |
| NAND Flash | Samsung V-NAND TLC |
| DRAM Cache | 2GB LPDDR4 |
Performance
| Interface | PCIe Gen 4.0 x4, NVMe 2.0 |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read QD1/T1 | Up to 22K IOPS |
| Random Write QD1/T1 | Up to 80K IOPS |
| Random Read QD32/T16 | Up to 1,400K IOPS |
| Random Write QD32/T16 | Up to 1,550K IOPS |
Power & Environment
| Idle Power (APST on) | 55 mW |
| Active Power - Read (Avg.) | 5.8 W |
| Active Power - Write (Avg.) | 5.1 W |
| L1.2 Mode Power | 5 mW |
| Operating Temperature | 0-70°C |
Reliability
| Endurance (TBW) | 1,200 TBW |
| MTBF | 1.5 Million Hours |
| Warranty | 5 Years |
| Security / Encryption | AES 256-bit, TCG/Opal 2.0, IEEE1667, MS eDrive |
| Management Software | Samsung Magician |
| Compatible Devices | Client PCs, PlayStation 5 |
General
| Brand | Samsung |
| Model Number | MZ-V9P4T0BW |
| Capacity | 4TB |
| Form Factor | M.2 (2280) |
| Dimensions | Max 80.0 x Max 22 x Max 2.3 mm |
| Controller | Samsung in-house Controller (Pascal, 8nm) |
| NAND Flash | Samsung V-NAND TLC |
| DRAM Cache | 4GB LPDDR4 |
Performance
| Interface | PCIe Gen 4.0 x4, NVMe 2.0 |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read QD1/T1 | Up to 22K IOPS |
| Random Write QD1/T1 | Up to 80K IOPS |
| Random Read QD32/T16 | Up to 1,600K IOPS |
| Random Write QD32/T16 | Up to 1,550K IOPS |
Power & Environment
| L1.2 Mode Power | 5 mW |
| Operating Temperature | 0-70°C |
Reliability
| Endurance (TBW) | 2,400 TBW |
| MTBF | 1.5 Million Hours |
| Warranty | 5 Years |
| Security / Encryption | AES 256-bit, TCG/Opal 2.0, IEEE1667, MS eDrive |
| Management Software | Samsung Magician |
| Compatible Devices | Client PCs, PlayStation 5 |