M28F101-120K1
1 Mb (128K x 8, Chip Erase) FLASH MEMORY

120ns | Vcc 5V | PLCC32 package

M28F101-120K1    M28F101-120K1   M28F101-120K1 M28F101-120K1

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It usesa command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
  • 5V ±10% SUPPLY VOLTAGE
  • 12V PROGRAMMING VOLTAGE
  • FAST ACCESS TIME: 120ns
  • BYTE PROGRAMING TIME: 10ms typical
  • ELECTRICAL CHIP ERASE in 1s RANGE
  • LOW POWER CONSUMPTION
    – Stand-by Current: 100mAmax 10,000
  • ERASE/PROGRAM CYCLES
  • INTEGRATED ERASE/PROGRAM-STOP TIMER
  • OTP COMPATIBLE PACKAGES and PINOUTS
  • ELECTRONIC SIGNATURE
    – ManufacturerCode: 20h
    – Device Code: 07h

NOT PULLED - NOT USED - NOT REFURBISHED - NOT SOLDERED - NOT RE-MARKED - NOT FAKED EXCLUSIVELY NEW OLD STOCK (NOS)
The devices are from old stock (OEM industrial , mainly from Germany), but they are NEW and UNUSED (NOS devices)
Taken out from the original packaging ( see photo).
What you see on the photo, is what you get .

If you need a higher quantity, please ask for a special offer or give us for the higher quantity your best offer.