The G150N50W4E is high performance Aluminum Nitride (AlN) flange

mount termination intended as a cost

competitive alternative to Beryllium

Oxide (BeO). The termination is well suited to all cellular frequency bands

such as; AMPS, GSM, DCS, PCS,

PHS and UMTS. The high power

handling makes the part ideal for terminating circulators and for use in

power combiners. The termination is also RoHS compliant!

RoHS Compliant

150 Watts

DC – 3.0 GHz

AlN Ceramic

Non-Nichrome Resistive Element

Low VSWR

100% Tested

Resistive Element :Thick Film

Substrate :AlN Ceramic

Mounting Flange :Nickel Plated Copper

Operating Temperature:-50 to +150°C (see de rating chart)

Tolerance is :±0.010", unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-5400. All dimensions in inches

Resistance Value: 50 Ohms, ±2%

Power: 150 Watts

Frequency Range: DC – 3.0 GHz

Return Loss:25dB DC – 2.0 GHz 20dB DC – 3.0 GHz

Specification based on unit properly installed using suggested mounting instructions and a 50 ohm nominal impedance. Specifications subject to change.

1x DC-3GHz RF Termination Microwave Resistor Dummy Load RFP 150N50F 150W 50 Ohms