Military p-n-p Germanium Transistors MP21B

Made in Ukraine.

Lot of 10pcs.

Each transistor contains gold (~0.045mg).

Military equipment.

 

Transistors MP21B germanium alloy p-n-p universal low-frequency. Designed for amplifying and switching low-frequency signals. Available in a metal-stacked case with flexible leads.

Very high quality. Military rhombus stamped on body.

Each transistor contains gold (~0.045mg). 

Main technical characteristics of the MP21B transistor:

The structure: p-n-p

Maximum voltage between collector and emitter: 40V

Maximum permissible constant emitter-base voltage : 50V

Maximum permissible collector direct current: 100 mA

Maximum permissible collector pulse current: 300 mA

Continuous collector power dissipation: 150 mW

Reverse collector current; <50 µA

Cutoff frequency of the current transfer ratio of the common-emitter: not less than 0.5 MHz

Static current transfer coefficient (hfe): 20-80

Operating temperature: (-60 to +75oC

Weight: 2 g.

Maximum size of transistor: D= Ø 11.7mm, L=8mm (without pins). 

NEW (NOS). Good working condition.

(You buy that see on a photo).

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Shipping:

Buyer pays fixed $11.00 Shipping & Handing costs for any country. This item will be shipped to you from Europe (Ukraine) through registered air mail with number of tracking immediately after payment is fully received and will be arriving within 1-3 weeks to your destination.

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