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Description: |
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Type Designator: |
BFR90A |
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Material of transistor: |
Si |
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Polarity: |
NPN |
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Maximum collector power dissipation (Pc): |
300mW |
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Maximum collector-base voltage (Ucb): |
20V |
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Maximum collector-emitter voltage (Uce): |
15V |
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Maximum emitter-base voltage (Ueb): |
2V |
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Maximum collector current (Ic max): |
30mA |
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Maximum junction temperature (Tj): |
150°C |
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Transition frequency (ft): |
6GHz |
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Collector capacitance (Cc), Pf: |
0.3 |
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Forward current transfer ratio (hFE), min/max: |
- |
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Manufacturer of BC109C transistor: |
Philips |
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Package of BC109C transistor: |
SOT-37 |
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Application: |
Low Noise, RF Transistor |