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Description: |
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Type Designator: |
BC109C |
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Material of transistor: |
Si |
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Polarity: |
NPN |
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Maximum collector power dissipation (Pc): |
300mW |
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Maximum collector-base voltage (Ucb): |
30V |
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Maximum collector-emitter voltage (Uce): |
20V |
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Maximum emitter-base voltage (Ueb): |
5V |
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Maximum collector current (Ic max): |
100mA |
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Maximum junction temperature (Tj): |
175°C |
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Transition frequency (ft): |
150MHz |
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Collector capacitance (Cc), Pf: |
5 |
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Forward current transfer ratio (hFE), min/max: |
350/800 |
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Manufacturer of BC109C transistor: |
CEMI |
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Package of BC109C transistor: |
TO-18 |
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Application: |
Low Noise, General Purpose Audio Amp. |