23 STMicro N-Ch. MOSFET 600Vdc @ 20A. RDS(on) = 0.140 Ω Second Gen. MDmesh Tech


This is a lot of 23 STMicro N-CHANNEL MOSFET 600V @ 20A RDS(on) = 0.140 ? SECOND GENERATION MDmesh™

WORLD’S LOWEST ON RESISTANCE: TYPICAL RDS(on) = 0.140 ?s
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE


DESCRIPTION
The STP25NM60N is realized with the secondgeneration of MDmesh Technology. This revolu-tionary MOSFET associates a new vertical struc-ture to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high ef-ficiency 

APPLICATIONS
The MDmesh™ II family is very suitable for in-crease the power density of high voltage convert-ers allowing system miniaturization and higher efficiencies.











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