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5 x IRF520N N-Channel HEXFET Power MOSFET Transistor Fast Switching TO-220
5 x IRF520N N-Channel HEXFET Power MOSFET Transistor Fast Switching TO-220
Description and Specification

These IRF520N N-Channel HEXFET Power MOSFETs are ideal for fast-switching, high-efficiency applications.

Designed using fifth-generation processing, they deliver extremely low on resistance and excellent reliability in a compact TO-220 through-hole package.

With rugged construction and high speed switching performance, they are perfect for power control, DC motors, LED drivers, switching regulators, and more.

  • Type: N-Channel HEXFET Power MOSFET
  • Model: IRF520N
  • Package: TO-220 (Through Hole)
  • Drain-Source Voltage (Vds): 100V
  • Continuous Drain Current (Id): 9.2A @ 25°C
  • Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
  • Rds(on): 0.27Ω max @ Vgs = 10V
  • Power Dissipation: 40W
  • Total Gate Charge (Qg): 67nC
  • Rise Time / Fall Time: ~30ns / ~20ns
  • Technology: Fifth-Generation HEXFET

What’s Included:

  • 5 x IRF520N N-Channel HEXFET Power MOSFETs (TO-220)

Great For:

  • Fast-switching power circuits
  • DC motor control
  • LED dimmers and drivers
  • Switching power supplies (SMPS)
  • Microcontroller-based projects (use logic-level gate driver)

Usage Tips:

  • Ensure proper heatsinking when handling high current
  • Drive gate with 10V for optimal switching performance
  • Compatible with many MOSFET driver ICs and PWM controllers

 

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