The KT801A transistor contains gold

KT801A lot of 25 PCS

Material of Transistor: Si

Main technical characteristics of the KT801A transistor:

• Transistor structure: n-p-n;

•Continuous collector power dissipation with heat sink: 5 W;

• Cutoff frequency of the transistor current transfer coefficient for a common emitter circuit: at least 10 MHz;

• Maximum collector-emitter voltage at a given collector current and a given base-emitter resistance: 80 V (0.1 kOhm);

• Uэбо max — Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 2.5 V;

• Maximum permissible continuous collector current: 2 A;

•  Collector-emitter reverse current at a given collector-emitter reverse voltage and base-emitter resistance: 10 mA (80 V);

•  Static current transfer coefficient of the transistor for common-emitter circuits: 13… 50;

•  Saturation resistance between the collector and emitter: no more than 2.5 Ohms