Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage 'Vds': 500 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Drain-Source Capacitance (Cd): 800 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO-220

Package Included:
5pcs IRF830 "IR" Power MOSFET N-Channel 4.5A 500V Transistor 100W