2SB778
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage 'Vcb': 120 V
Maximum Collector-Emitter Voltage 'Vce': 120 V
Maximum Emitter-Base Voltage 'Veb': 5 V
Maximum Collector Current 'Ic max': 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60

2SD998
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage 'Vcb': 120 V
Maximum Collector-Emitter Voltage 'Vce': 120 V
Maximum Emitter-Base Voltage 'Veb': 5 V
Maximum Collector Current 'Ic max': 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60

Package Included:
2SB778 + 2SD998 Pair Transistors Bipolar NPN PNP KTB778/KTD998 TO-3P