Description:

Description:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage 'Vds': 200 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 185 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO-220
RoHS Compliant: Yes

Package Included:
10pcs IRF640N "IR" Power MOSFET N-Channel 18A 200V Transistor to-220