2SD1047
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage 'Vcb': 160 V
Maximum Collector-Emitter Voltage 'Vce': 140 V
Maximum Emitter-Base Voltage 'Veb': 6 V
Maximum Collector Current 'Ic max': 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 210 pF
Forward Current Transfer Ratio (hFE), MIN: 60

2SB817
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage 'Vcb': 160 V
Maximum Collector-Emitter Voltage 'Vce': 160 V
Maximum Emitter-Base Voltage 'Veb': 6 V
Maximum Collector Current 'Ic max': 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7.5 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 60

Package TO-3P

Package Included:
2SB817 + 2SD1047 Pair Transistors B817 + D1047 PNP+NPN Power 100W 12A 160V