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Mfr Package DescriptionTSOP-6
StatusIn Stock
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)4.2 A
Drain Current-Max (ID)4.2 A
Drain-source On Resistance-Max0.065 ohm
DS Breakdown Voltage-Min30.0 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PDSO-G6
Number of Elements1.0
Number of Terminals6
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150.0 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)2.0 W
Pulsed Drain Current-Max (IDM)20.0 A
Qualification StatusNot Qualified
Sub CategoryFET General Purpose Power
Surface MountYES
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON