Photo Diode - InGaAs Wide Band High Sensitivity Light Detector

InGaAs-PIN Photo Diode with TIA/AGC Amplifiers - High-speed Long Wavelength Light Sensor

The JDSU EDR512D is a high-speed photo detector of an InGaAs-PIN photodiode with a trans-impedance and automatic gain amplifiers integrated in the same TO-46 package.The photo detector offers high sensitivity over a wide spectral range near infra-red light field. Shielded high gain amplifier makes immune to crosstalk or nearby EMI sources.
Each JDSU Uniphase EDR512DTL InGaAs-PIN diode comes with an individual test measurement results.

Cutoff Frequency: 200MHz (typ.)

Dark Current:  <  1nA.

Peak wavelength:  1,550nm

Half-Power Spectral Width: 1,050-1,650nm

Spectral Response Range: 850-1,750nm@10% point.

Active Area: 0.075mm Dia.

Photo Sensitivity:  26.5mV/uW at 1,310nm (typ.)

Sensitivity: -38.5dBm @ 1E-10BER (0.14uW, typ.)

Max Optical Input: 2dBm (1.6mW)

Optical Dynamic Range: 41.5dB. (typ.)

AGC Threshold: 2uW

Output Driver: Differential 800mVp-p.

Operating Temp: -40 to +85C  

Single Power Rail: 4.5-5.5VDC

4-pin TO-46 package

Sale price is for one (1) units of the EDR512DTL