| Type Designator: 2N269
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.12
Maximum collector-base voltage ¦Ucb¦, V: 20
Maximum collector-emitter voltage ¦Uce¦, V: 20
Maximum emitter-base voltage ¦Ueb¦, V: 9
Maximum collector current ¦Ic max¦, A: 0.1
Maximum temperature (Tj), °C: 85
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 30 |