Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

The a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use.

Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch = 25°C Condition Rating to +175 Unit W °C °C Solid State Base-Station Power Amplifier. PCS/PCN Communication Systems.

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with gate resistance 25. 3. The operating channel temperature (Tch) should not exceed 145°C.

Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power 1 dB G.C.P. Power Gain 1 dB G.C.P. Drain Current Power-Added Efficiency Output Power 1 dB G.C.P. Power Gain 1 dB G.C.P. Thermal Resistance CASE STYLE: IP Symbol IDSS gm Vp VGSO P1dB G1dB IDSR add P1dB G1dB Rth VDS 12V f=1.96GHz IDS = 2A VDS 10V f=1.96GHz IDS = 2A Channel to Case Conditions VDS 5V, VGS=0V VDS 5V, IDS=7.2A VDS 5V, IDS=720mA IGS = -720µA Min. Limits Typ. Max. Unit mS V dBm A % dBm dB °C/W