|
Part: 2N3636
Material of transistor: Si
Polarity: pnp
Maximum collector power dissipation (Pc): 1W
Maximum collector-base voltage (Ucb): 175V
Maximum collector-emitter voltage (Uce): 175V
Maximum emitter-base voltage (Ueb): 5V
Maximum collector current (Ic max): 1A
Maximum junction temperature (Tj): 200°C
Transition frequency (ft): 150MHz
Collector capacitance (Cc), Pf: 10
Forward current transfer ratio (hFE), min/max: 50/150
Manufacturer : Tansitor
Package of 2N3636 transistor: TO5
Application: Medium Power, High Voltage, General Purpose
|