Transistor Type: IGBT Driver


Collector-Emitter Breakdown Voltage (VCES) (V): 1200V

Maximum Collector Current (IC(max)) (A): 300A

Gate-Emitter Voltage (VGES) (V): ±20

Switching Frequency (kHz): 50kHz

Operating Temperature Range (°C): -40°C~175°C (TJ)

Collector Pulse Current () (A): 50

On-State Voltage Drop ((on)) (V): ±15

Maximum Power Dissipation (Pd(max)) (W): 1.2kW

Collector-Base Cut-off Current (ICBO) (A): 20μA

Collector-Emitter Cut-off Current (ICEO) (A): 5µA

Gate Charge (Qg) (C): 20nC

Reverse Recovery Time (trr): 150ns

Collector Continuous Current (IC) (A): 50

Collector-Emitter Saturation Voltage ((sat)) (V): 2.3V
Color: White
Material: ABS

Package Contents:
1x IGBT Driver Module