1601РР1Б
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 1601RR1B


USSR

Military Grade

Gold plated


 NOS

Qty1


Microcircuits 1601PP1B are a reprogrammable memory device (a matrix-storage device with control circuits, address decoders and read amplifiers with electrical rewriting and storage of information when the supply voltages are disconnected) with a capacity of 4 kbit (1k x 4).

1601PP1B provides 4 modes: general erasure, selective erasure, recording and reading. They are intended for use in units and blocks of special-purpose electronic equipment. 

They are produced in a flat metal-ceramic case with a double-sided arrangement of leads for mounting on the surface of a printed circuit board.

Contain 14832 integrated elements.

Quality category: "ВП" / Military Grade.

Analog: ER3400 microcircuit.


Decoding the conventional designation of a special-purpose integrated circuit 1601РР1Б

● the absence of a letter indicates the quality category "VP", the presence of the letters "ОСД", "ОСМ", "ОС" indicates the corresponding quality category of the microcircuit;

1 - a digit, indicates the group of the microcircuit by technological design, where 1 is a semiconductor microcircuit;

601 - digits, determine the development number of a specific type of design. Together, the second and third elements denote the series number;

РР (RR) - letters, indicate the subgroup and type of functional purpose of the microcircuit, where РР is a read-only memory (ROM) with the possibility of multiple electrical reprogramming with parallel input/output of information;

1 - a digit determines the conventional number of the microcircuit development in a given series by a certain functional feature;

Б (B) - a letter indicates the difference in microcircuits of the same type by electrical parameters, design or temperature range.



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