Transistors 1T403B germanium alloy structures p-n-p amplifier.
Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers.
Used to work in special-purpose electronic equipment.
Available in a metal-glass case with flexible leads.
Main technical characteristics of transistor 1T403B:
• Structure: p-n-p
• Constant power dissipation of the collector with a heat sink: 4 W;
• Maximum generation frequency: 0.008 MHz;
• Collector-base breakdown voltage at a given collector reverse current and emitter open circuit: 45 V;
• Emitter-base breakdown voltage at a given emitter reverse current and open collector circuit: 20 V;
• Maximum permissible direct collector current: 1250 mA;
• Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 50 μA at 45 V;
• h21e - Transistor voltage feedback coefficient in small signal mode for circuits with a common emitter and a common base, respectively: 50...150 at 5V, 0.1 A;
• Saturation resistance between collector and emitter: no more than 1 Ohm;
• Transistor noise figure: not standardized