Transistors 1T308V germanium diffusion-alloy structures p-n-p high-frequency, pulse. 

Designed for use in autogenerators, power amplifiers, pulse devices. Used to work in special-purpose electronic equipment. 

They are produced in a glass-to-metal casing with flexible leads. The marking is applied with an alphanumeric code on the transistor case.

Case type: KTYu-3-4 

Mass - not more than 2.2 g

Climatic version: "UHL"

Quality category: "VP", "OS"

Specifications: ZhK3.365.120TU

The minimum shelf life is 25 years from the date of acceptance, and in case of rechecking the product - from the date of rechecking. 

Main technical characteristics of the 1T308V transistor: 

• Structure: p-n-p 

• Рк max - Constant dissipated power of the collector: 150 mW; 

• Fgr - The limiting frequency of the current transfer ratio of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; 

• Ukbo - breakdown voltage collector-base at a given reverse current of the collector and open emitter circuit: 20 V; 

• Uebo - emitter-base breakdown voltage at a given reverse current of the emitter and open collector circuit: 3 V; 

• Ik max - Maximum permissible constant collector current: 50 mA; 

• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 5 μA; 

• h21E - Static current transfer coefficient for a circuit with a common emitter in large signal mode: 80 ... 150 (1V; 10mA); 

• CK - Collector junction capacity: no more than 8 (5V); 

• Rke sat - Saturation resistance between collector and emitter: no more than 24 Ohm; 

• Ksh - Transistor noise figure: no more than 8 dB (1.6 MHz); 

• tc - Time constant of the feedback loop at high frequency: no more than 400 ps