MTD20P03HDL
Motorola
30V / 20A / 99 mOhm
HDTMOS E-FET[tm] High Density Power FET DPAK sourface mount P-Channel Enhancement-Mode Silicon Gate
This
advanced HDTMOS power FET is designed to withstand high energy in the
avalanche and commutation modes. This new energy efficient design also
offers a drain-to-source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin against
unexpected voltage transients.