This product is a silicon carbide (SiC) substrate wafer available in square and circular shapes, with sizes ranging from 2 to 6 inches, dedicated to scientific research and experiments in power electronics and photonics. It boasts high breakdown electric field, high thermal conductivity, and high electron mobility, meeting the requirements of high power density, high temperature resistance in power systems, as well as high frequency and low loss in photonics. The wafer surface undergoes precision processing, featuring high flatness and low impurity content, which reduces interference factors in scientific research experiments and ensures the accuracy and stability of experimental data.