Our polished silicon wafers stand out with an impressive 11N high purity, ensuring top-tier performance for a wide range of applications. Available in sizes from 1" to 12", as well as custom dimensions, they cater to diverse project needs. You can choose from single-side polished, double-side polished, ground, etched, or cut surfaces to match your specific requirements.
Featuring various crystal orientations including <100>, <111>, <110>, <211>, <511>, and those with different off-angles, these wafers offer great flexibility. Thickness options are abundant too, ranging from 100μm, 200μm, 300μm, 400μm, 500μm to 1mm, 5mm, with a thickness tolerance of ±10μm, TTV < 10μm (or as per customer requests), and a roughness of <0.2nm.
In terms of conductivity, we provide N-type, P-type, and undoped (intrinsic high resistance) options. The single crystal formation methods include Czochralski (CZ), Floating Zone (FZ), and NTD (neutron transmutation doping). Resistivity ranges are extensive: heavily doped ones can reach <0.001 ohm.cm; lightly doped conventional ones are 1~10 ohm.cm; NTD conventional ones are 500~800 ohm.cm; FZ intrinsic ones are >1000 ohm.cm, >3000 ohm.cm, >5000 ohm.cm, >8000 ohm.cm, >10000 ohm.cm.
Our wafers meet strict process parameters: flatness TIR ≤ 3μm, warpage TTV ≤ 10μm, Bow/Warp ≤ 40μm, roughness ≤ 0.5nm, and particle count ≤ 10ea@ >0.3μ. They come in ultra-clean aluminum foil vacuum packaging, with 10-piece and 25-piece options.
We also offer customization services for model, crystal orientation, thickness, resistivity, etc. The processing time varies slightly depending on different specifications and parameters. These wafers are ideal for use as synchrotron radiation sample carriers, substrates for PVD/CVD coating, bases for magnetron sputtering sample growth, substrates for analytical tests such as XRD, SEM, atomic force, infrared spectroscopy, fluorescence spectroscopy, and substrates for molecular beam epitaxy growth, as well as X-ray analysis crystal semiconductors.