IC Memory DRAM 41C464 41464 256K 80ns CMOS SAMSUNG KM41C464-8 DIP18

IC: pamięć DRAM; 256K (65536 x 4 bit); access 80ns; cycle 150ns; Iccmax 55mA; Vcc 5V TTL; DIP18;
SAMSUNG KM41C464 CMOS Dynamic Random Access Memory Fast page mode 41464 compatible

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SLAWMIR Electronics
located in Warsaw, Poland