IC Memory DRAM 4116 16K 150ns Siemens HYB4116-P2 DIP16
IC: pamięć DRAM; 16K (16384 x 1 bit); access 150ns; cycle 320ns; Iccmax 35mA; power: active 462mW / standby 20mW; 5V TTL; DIP16;
Siemens HYB4116 16,384x1bit 150ns Dynamic Random Access Memory Plastic DIP16
datasheet.datasheetarchive.com/originals/distributors/Datasheets-X/DSA842000-160.pdf
datasheetspdf.com/pdf-file/534629/InfineonTechnologies/HYB4116-3/1
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SLAWMIR Electronics
located in Warsaw, Poland