Description and Applications
Designed for broadband commercial and military
applications at frequencies to 110 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.

Part No.  ：   MRF186

 Download ： 120W ,  1000MHz , 28V

RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs


Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 960 MHz, 28 Volts Output Power — 120 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW

   Maker      :   MOTOROLA