2N5087 Bipolar Transistor BJT PNP Gen Pur

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 135

Transition frequency (ft), MHz: 40

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 250

Package of 2N5087 transistor: TO92